V.V Chaldyshev: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

1

Electron microscopy of GaAs Structures with InAs and as quantum dots

V. N. Nevedomskii, N. A. Bert, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2011

Language:

english

File:

PDF, 432 KB

english, 2011

2

Energy structure of narrow-band solid solutions of III-V compounds containing Tl and Bi

S. N. Grinyaev, A. V. Nyavro, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1985

Language:

english

File:

PDF, 418 KB

english, 1985

3

Energy band structure and optical properties of CdSnP2

A. N. Pikhtin, V. N. Razbegaev, N. A. Goryunova, E. I. Leonov, V. M. Orlov, G. F. Karavaev, A. S. Poplavnoi, V. A. Chaldyshev

Journal:

physica status solidi (a)

Year:

1971

Language:

english

File:

PDF, 429 KB

english, 1971

4

Surface states in gallium arsenide

V. A. Goryunov, V. A. Chaldyshev, V. N. Chernyshov

Journal:

Russian Physics Journal

Year:

1979

Language:

english

File:

PDF, 203 KB

english, 1979

5

Elastic behavior of a spherical inclusion with a given uniaxial dilatation

N. A. Bert, A. L. Kolesnikova, A. E. Romanov, V. V. Chaldyshev

Journal:

Physics of the Solid State

Year:

2002

Language:

english

File:

PDF, 263 KB

english, 2002

6

Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton–polariton and Bragg resonance

V. V. Chaldyshev, A. S. Shkolnik, V. P. Evtikhiev, T. Holden

Journal:

Journal of Materials Science: Materials in Electronics

Year:

2008

Language:

english

File:

PDF, 219 KB

english, 2008

7

Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state

Chen, Y., Maharjan, N., Liu, Z., Nakarmi, M. L., Chaldyshev, V. V., Kundelev, E. V., Poddubny, A. N., Vasil'ev, A. P., Yagovkina, M. A., Shakya, N. M.

Journal:

Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 2.68 MB

english, 2017

8

Low-Temperature Molecular-Beam Epitaxy of GaAs: Effect of Excess Arsenic on the Structure and Properties of the GaAs Layers

L. G. Lavrent'eva, M. D. Vilisova, V. V. Preobrazhenskii, V. V. Chaldyshev

Journal:

Russian Physics Journal

Year:

2002

Language:

english

File:

PDF, 388 KB

english, 2002

9

Vapour phase epitaxial grown GaAs films with a very low deep level concentration

V.V. Chaldyshev, E.V. Astrova, A.A. Lebedev, I.A. Bobrovnikova, N.A. Chernov, O.M. Ivleva, L.G. Lavrentieva, I.V. Teterkina, M.D. Vilisova

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 308 KB

english, 1995

10

Electroreflectance Spectra and Energy Band Structure of CdSnP2

J. Kavaliauskas, G. F. Karavaev, E. I. Leonov, V. M. Orlov, V. A. Chaldyshev, A. Šileika

Journal:

physica status solidi (b)

Year:

1971

Language:

english

File:

PDF, 543 KB

english, 1971

11

Ostwald ripening in two-dimensional and three-dimensional systems of As clusters in low temperature grown GaAs films

V.V. Chaldyshev, N.A. Bert, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin

Journal:

Materials Science and Engineering: A

Year:

1997

Language:

english

File:

PDF, 387 KB

english, 1997

12

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Tret’yakov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

1998

Language:

english

File:

PDF, 125 KB

english, 1998

13

An (AlGaAs/GaAs/AlGaAs)60resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells

V. V. Chaldyshev, D. E. Sholohov, A. P. Vasil’ev

Journal:

Year:

2010

Language:

english

File:

PDF, 185 KB

english, 2010

14

Investigation of deep levels of AsGaand GaAsantistructural defects and InAsand SbGaheteroantistructural defects in GaAs using a 4×4×4 expanded unit cell technique

S. N. Grinyaev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1996

Language:

english

File:

PDF, 547 KB

english, 1996

15

Localized states near the band gap of GaAs caused by tetrahedral arsenic clusters

S. N. Grinyaev, V. A. Chaldyshev

Journal:

Year:

1998

Language:

english

File:

PDF, 155 KB

english, 1998

16

Energy-band structure of semiconductors having the chalcopyrite lattice II. MgSiP2, ZnGeP2, ZnSiAs2, and CdSiP2

A. S. Poplavnoi, Yu. I. Polygalov, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1970

Language:

english

File:

PDF, 357 KB

english, 1970

17

Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum state

Chaldyshev, V. V., Chen, Yuechao, Poddubny, A. N., Vasilâev, A. P., Liu, Zhiheng

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 414 KB

english, 2011

18

Structural transformations in low-temperature grown GaAs:Sb

Vasyukov, D A, Baidakova, M V, Chaldyshev, V V, Suvorova, A A, Preobrazhenskii, V V, Putyato, M A, Semyagin, B R

Journal:

Journal of Physics D Applied Physics

Year:

2001

Language:

english

File:

PDF, 338 KB

english, 2001

19

Sb-rich nanoinclusions in an AlGaAsSb metamaterial

Bert, Nikolay A., Chaldyshev, Vladimir V., Cherkashin, Nikolay A., Nevedomskiy, Vladimir N., Preobrazhenskii, Valery V., Putyato, Michael A., Semyagin, Boris R., Ushanov, Vitaliy I., Yagovkina, Maria

Journal:

Year:

2019

File:

PDF, 1.32 MB

2019

20

Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates

N. N. Dymova, A. E. Kunitsyn, V. V. Chaldyshev, A. V. Markov

Journal:

Year:

1997

Language:

english

File:

PDF, 86 KB

english, 1997

21

Elastic fields and physical properties of surface quantum dots

N. A. Bert, A. L. Kolesnikova, I. K. Korolev, A. E. Romanov, A. B. Freidin, V. V. Chaldyshev, E. C. Aifantis

Journal:

Physics of the Solid State

Year:

2011

Language:

english

File:

PDF, 651 KB

english, 2011

22

Transport of nonequilibrium electrons in photoemission from semibounded medium

V. V. Konev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1987

Language:

english

File:

PDF, 384 KB

english, 1987

23

Model pseudopotentials: Calculation of the band structure and optical properties of a CsI crystal

S. G. Kataev, A. V. Nyavro, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1990

Language:

english

File:

PDF, 325 KB

english, 1990

24

Optical lattices of InGaN quantum well excitons

Chaldyshev, V. V., Bolshakov, A. S., Zavarin, E. E., Sakharov, A. V., Lundin, W. V., Tsatsulnikov, A. F., Yagovkina, M. A., Kim, Taek, Park, Youngsoo

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 773 KB

english, 2011

25

Influence of Antimony Doping on Nanoscale Arsenic Clusters and Dislocation Loops in Low-Temperature Grown Gallium Arsenide Films

Chaldyshev, V.V., Bert, N.A., Romanov, A.E., Suvorova, A.A., Kolesnikova, A.L., Preobrazhenskii, V.V., Putyato, M.A., Semyagin, B.R., Werner, P.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 563 KB

english, 2000

26

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

Kosarev, A. N., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Year:

2016

Language:

english

File:

PDF, 300 KB

english, 2016

27

Research of resonant light reflection by a periodic system of GaAs/AlGaAs quantum wells.

Tonkaev, P.A., Kondikov, A.A., Chaldyshev, V. V.

Journal:

Journal of Physics Conference Series

Year:

2016

Language:

english

File:

PDF, 986 KB

english, 2016

28

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature

Ushanov, V. I., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Year:

2018

Language:

english

File:

PDF, 231 KB

english, 2018

29

Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE

V.V Chaldyshev, N.N Faleev, N.A Bert, Yu.G Musikhin, A.E Kunitsyn, V.V Preobrazhenskii, M.A Putyato, B.R Semyagin, P Werner

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 187 KB

english, 1999

30

High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus

V. V. Chaldyshev, M. A. Yagovkina, M. V. Baidakova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2009

Language:

english

File:

PDF, 265 KB

english, 2009

31

Account of the nonbinary nature of the ion interaction in lattice dynamics

V. G. Tyuterev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1970

Language:

english

File:

PDF, 287 KB

english, 1970

32

Abstracts of papers deposited at VINITI

V. M. Lisitsyn, V. I. Korepanov, E. V. Borovko, Yu. A. Dobrozhanskii, V. A. Presnov, V. A. Chaldyshev, V. N. Chernyshov, V. V. Gorlach, V. V. Svishchenko, G. V. Maier, I. N. Anokhina, V. E. Egorushkin

Journal:

Russian Physics Journal

Year:

1975

Language:

english

File:

PDF, 257 KB

english, 1975

33

Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs

Bert, N. A., Chaldyshev, V. V., Faleev, N. N., Kunitsyn, A. E., Tret'yakov, V. V., Lubyshev, D. I., Preobrazhenskii, V. V., Semyagin, B R.

Journal:

MRS Proceedings

Year:

1995

Language:

english

File:

PDF, 1.41 MB

english, 1995

34

Resonant optical reflection by periodic systems of the GaAs/AlGaAs quantum well excitons

V. V. Chaldyshev, E. V. Kundelev, Yuechao Chen, A. N. Poddubny, A. P. Vasil'ev, Zhiheng Liu

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 240 KB

english, 2012

35

Optical properties of cubic K3Sb: Dependence of theoretical electron spectra and dielectric function on the pseudopotential parameters

V. P. Kiselev, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1989

Language:

english

File:

PDF, 467 KB

english, 1989

36

In–Ga intermixing in low-temperature grown GaAs delta doped with In

Bert, N. A., Chaldyshev, V. V., Musikhin, Yu. G., Suvorova, A. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Werner, P.

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 576 KB

english, 1999

37

Enhanced arsenic excess in low-temperature grown GaAs due to indium doping

Bert, N. A., Chaldyshev, V. V., Kunitsyn, A. E., Musikhin, Yu. G., Faleev, N. N., Tretyakov, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 418 KB

english, 1997

38

Resonant Bragg structures based on III-nitrides

Bolshakov, Andrey S., Chaldyshev, Vladimir V., Lundin, Wsevolod V., Sakharov, Alexey V., Tsatsulnikov, Andrey F., Yagovkina, Maria A., Zavarin, Evgenii E.

Journal:

Journal of Materials Research

Year:

2015

Language:

english

File:

PDF, 357 KB

english, 2015

39

Capacitance Spectroscopy of Thin GaAs Layers Grown by Molecular Beam Epitaxy at Low Temperatures

Chaldyshev, V.V., Brounkov, P.N., Suvorova, A.A., Konnikov, S.G., Preobrazhenski, V.V., Putyato, M.A., Semyagin, B.R.

Journal:

Solid State Phenomena

Year:

1997

File:

PDF, 387 KB

1997

40

Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C

N. A. Bert, A. A. Suvorova, V. V. Chaldyshev, Yu. G. Musikhin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, R. Werner

Journal:

Year:

1998

Language:

english

File:

PDF, 452 KB

english, 1998

41

Capacitance study of electron traps in low-temperature-grown GaAs

P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Journal:

Year:

2004

Language:

english

File:

PDF, 102 KB

english, 2004

42

Energy spectra of electrons in crystals part 6. Associated corepresentations

N. V. Kudryavtseva, V. A. Chaldyshev

Journal:

Russian Physics Journal

Year:

1965

Language:

english

File:

PDF, 396 KB

english, 1965

43

Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers

Baidakova, M. V., Bert, N. A., Chaldyshev, V.V., Nevedomsky, V. N., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Acta Crystallographica Section B Structural Science

Year:

2013

Language:

english

File:

PDF, 276 KB

english, 2013

44

Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy

Cherkashin, N., Reboh, S., Hÿtch, M. J., Claverie, A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Chaldyshev, V. V.

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 2.66 MB

english, 2013

45

Zinc blende GaAs films grown on wurtzite GaN∕sapphire templates

Chaldyshev, V. V., Nielsen, B., Mendez, E. E., Musikhin, Yu. G., Bert, N. A., Ma, Zh., Holden, Todd

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 389 KB

english, 2005

46

Elastic Energy Relaxation in Buried Quantum Dots

Chaldyshev, Vladimir V, Kolesnikova, Anna L., Romanov, Alexei E.

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 188 KB

english, 2006

47

Study of Gallium and Antimony Cluster Formation în GaSb Bulk Crystals Grown from Nonstoichiometric Melts

Bert, N.A., Chaldyshev, V.V., Kunitsyn, A.E., Milvidskaya, A.G., Mil'vidskii, M.G.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 386 KB

1995

48

Fröhlich resonance in the AsSb/AlGaAs system

Ushanov, V. I., Chaldyshev, V. V., Il’inskaya, N. D., Lebedeva, N. M., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

Journal:

Physics of the Solid State

Year:

2014

Language:

english

File:

PDF, 234 KB

english, 2014

49

Properties of tellurium-doped gallium antimonide single crystals grown from nonstoichiometric melt

A. E. Kunitsyn, V. V. Chaldyshev, A. G. Mil’vidskaya, M. G. Mil’vidskii

Journal:

Year:

1997

Language:

english

File:

PDF, 59 KB

english, 1997

50

Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs

N. A. Bert, A. L. Kolesnikova, V. N. Nevedomsky, V. V. Preobrazhenskii, M. A. Putyato, A. E. Romanov, V. M. Seleznev, B. R. Semyagin, V. V. Chaldyshev

Journal:

Year:

2009

Language:

english

File:

PDF, 649 KB

english, 2009

To build up a library is to create a life. It’s never just a random collection of books.

— Carlos María Domínguez

Official channel

Z-Library Desktop Launcher

Z-Library Since 2009 support@1delivery.pm

EnglishРусскийEspañolItalianoελληνικάاللغة العربيةBahasa IndonesiaBahasa Malaysiaहिन्दीDeutschFrançaisPortuguêsУкраїнськаPolski中文繁體中文日本語Tiếng ViệtAzərbaycan DiliՀայոց լեզուภาษาไทยTürk Diliქართველიবাংলাپښتوతెలుగుاردو한국어SrpskiБългарски